It's worth noting that Samsung intends 8LPP to be their last non- EUV node. 8LPP improvements over 10LPP is similar to their 11LPP improvements over their 14LPP. Samsung intends to introduce a third generational enhanced 10nm process called 8LPP (8 Low Power Plus) which will further improve performance and introduce a small density increase through cell enhancements and a narrower metal pitch. Samsung's initial process was 10LPE (10 Low-Power Early) which was replaced by second generation evolved process 10LPP (10 Low-Power Plus). ChipWorks/TechInsight measured the CPP/MMP which came a little short of the Common Platform Alliance Paper which was presented in 2016, at 68 nm contacted gate pitch, 51 nm metal pitch, dual-depth shallow trench isolation (STI), and had single dummy gate. Samsung, which unlike Intel uses LELELE (litho-etch-litho-etch-litho-etch), ramped up mass production in May of 2017. Samsung demonstrated their 128 Megabit SRAM wafer from their 10nm FinFET process. Because of the ever shrinking geometries the wires get smaller each node. This is the first time cobalt is used in a high volume production node. The process can support multiple threshold voltages, and features 12-metal interconnect layers with the bottom two made of cobalt. Intel's 10nm process is roughly 1.7x the raw logic density of the next densest 10nm process, albeit due to aggressive pattering techniques they also have the most complex process available to date. Intel expect their "10nm+" process to surpass that. Intel's initial 10 nm process has up to 60% lower power and 25% better performance than their initial 14 nm but will actually have lower performance than their "14nm++" process. Intel detailed Hyper-Scaling, a marketing term for a suite of techniques used to scale a transistor, SAQP, a single dummy gate and contact over active gate (COAG). Although both TSMC and Samsung's 10nm processes are slightly denser than Intel's 14nm in raw logic density, they are far closer to Intel's 14nm than they are to Intel's 10nm (e.g., Samsung's metal pitch just 1 nanometer shorter than Intel's 14nm).Īnnounced during Intel's Technology and Manufacturing Day 2017, Intel's 10 nm process (P1274) is Intel's first high-volume manufacturing process to employ Self-Aligned Quad Patterning (SAQP) with production starting in the second half of 2017. Due to the small feature sizes, for the critical dimensions, quad and triple patterning were introduced for the first time in high-volume manufacturing.Īt the advanced 10nm process, there are only 3 semiconductor foundries with such manufacturing capabilities: Intel, Samsung, and TSMC.ĭue to marketing names, geometries vary greatly between leading manufacturers. Those nodes typically have a gate pitch in range of 50-60s nm and a minimum metal pitch in the range of 30-40s nm. This list is incomplete you can help by expanding it.First introduced between 2017-2019, the 10 nm process technology is characterized by its use of FinFET transistors with a 30-40s nm fin pitches. This list is incomplete you can help by expanding it. If this holds true we could see 300+ MT/mm2. N3 technology will offer up to 70% logic density gain, up to 15% speed improvement at the same power and up to 30% power reduction at the same speed as compared with N5 technology (According to TSMCs website). This is planned for somewhere after the 5nm node but the exact timeline or specification is currently unknown. On Samsung announced they will be switching to a transistor they call Multi-Bridge-Channel FET ( MBCFET), an extension of a Gate-all-around (GAA) FET. Intel's 5-nanometer (renamed as Intel 20A) process node is expected to ramp around the 2H2024/2025 timeframe.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |